دیتاشیت FGH75T65SHD-F155
مشخصات دیتاشیت
نام دیتاشیت |
FGH75T65SHD
|
حجم فایل |
1467.284
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGH75T65SHD-F155
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
150A
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Power Dissipation (Pd):
455W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
2.4mJ
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Pulsed Collector Current (Icm):
225A
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Turn?off Switching Loss (Eoff):
0.72mJ
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Diode Reverse Recovery Time (Trr):
43.4ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
150A
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Current - Collector Pulsed (Icm):
225A
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Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 75A
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Power - Max:
455W
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Switching Energy:
2.4mJ (on), 720µJ (off)
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Input Type:
Standard
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Gate Charge:
123nC
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Td (on/off) @ 25°C:
28ns/80ns
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Test Condition:
400V, 75A, 3Ohm, 15V
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Reverse Recovery Time (trr):
43.4ns
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247 Long Leads
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Base Part Number:
FGH75
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detail:
IGBT Trench Field Stop 650V 150A 455W Through Hole TO-247 Long Leads